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 VLM.33..
Vishay Semiconductors
Power SMD LED PLCC-2
FEATURES * Utilizing (AS) AlInGaP technology * Available in 8 mm tape * Luminous intensity and color categorized e3 per packing unit * Luminous intensity ratio per packing unit IVmax/IVmin 1.6 * Thermal resistance R = 400 K/W * ESD-withstand voltage: up to 2 kV according to JESD22-A114-B * Lead (Pb)-free device * Preconditioning: acc. to JEDEC Level 2a * Compatible with Reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020C * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * Automotive qualified AEC-Q101
19225
DESCRIPTION The VLM.33.. series is an advanced modification of the Vishay VLM.33.. series. It is designed to incorporate larger chips, therefore, capable of withstanding a 50 mA drive current. The package of the VLM.33.. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Product series: SMD Power * Package: PLCC-2 * Angle of half intensity: 60
APPLICATIONS * Traffic signals and signs * Interior and exterior lighting * Dashboard illumination * Indicator and backlighting purposes for audio, video, LCDs switches, symbols, illuminated advertising etc
PARTS TABLE
PART VLMR33T1U2-GS08 VLMR33T1U2-GS18 VLMR33R2U2-GS08 VLMR33R2U2-GS18 VLMS33S1T2-GS08 VLMS33S1T2-GS18 VLMS33S1U1-GS08 VLMS33S1U1-GS18 VLMO33S1T2-GS08 VLMO33S1T2-GS18 VLMO33T1U2-GS08 VLMO33T1U2-GS18 VLMO33R2U2-GS08 Document Number 81336 Rev. 1.0, 04-May-07 COLOR, LUMINOUS INTENSITY Amber, IV = (280 to 710) mcd Amber, IV = (280 to 710) mcd Amber, IV = (140 to 710) mcd Amber, IV = (140 to 710) mcd Super red, IV = (180 to 450) mcd Super red, IV = (180 to 450) mcd Super red, IV = (180 to 560) mcd Super red, IV = (180 to 560) mcd Soft orange, IV = (180 to 450) mcd Soft orange, IV = (180 to 450) mcd Soft orange, IV = (280 to 710) mcd Soft orange, IV = (280 to 710) mcd Soft orange, IV = (140 to 710) mcd TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs www.vishay.com 1
VLM.33..
Vishay Semiconductors
PARTS TABLE
PART VLMO33R2U2-GS18 VLMY33T1U2-GS08 VLMY33T1U2-GS18 VLMY33R2U2-GS08 VLMY33R2U2-GS18 COLOR, LUMINOUS INTENSITY Soft orange, IV = (140 to 710) mcd Yellow, IV = (280 to 710) mcd Yellow, IV = (280 to 710) mcd Yellow, IV = (140 to 710) mcd Yellow, IV = (140 to 710) mcd TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs
ABSOLUTE MAXIMUM RATINGS1) VLM.33..
PARAMETER Reverse voltage2) DC Forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) Tamb 73 C (400 K/W) TEST CONDITION SYMBOL VR IF PV Tj Tamb Tstg RthJA VALUE 5 50 130 125 - 40 to + 100 - 40 to + 100 400 UNIT V mA mW C C C K/W
Note: 1) Tamb = 25 C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for a short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMR33.., AMBER
PARAMETER Luminous intensity Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current Note: 1) Tamb = 25 C, unless otherwise specified IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA VR = 5 V TEST CONDITION IF = 30 mA PART VLMR33T1U2 VLMR33R2U2 SYMBOL IV IV V/IV d p VF IR 1.7 611 MIN 280 140 3 617 624 18 60 2.0 0.01 2.5 10 622 TYP. MAX 710 710 UNIT mcd mcd mlm/mcd nm nm nm deg V A
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Document Number 81336 Rev. 1.0, 04-May-07
VLM.33..
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMS33.., SUPER RED
PARAMETER Luminous intensity Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current Note: 1) Tamb = 25 C, unless otherwise specified IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA VR = 5 V TEST CONDITION IF = 30 mA PART VLMS33S1T2 VLMS33S1U1 SYMBOL IV IV V/IV d p VF IR 1.7 626 MIN 180 180 3 630 641 17 60 2.0 0.01 2.5 10 638 TYP. MAX 450 560 UNIT mcd mcd mlm/mcd nm nm nm deg V A
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMO33.., SOFT ORANGE
PARAMETER Luminous intensity Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current
1)
TEST CONDITION IF = 30 mA
PART VLMO33S1T2 VLMO33T1U2 VLMO33R2U2
SYMBOL IV IV IV V/IV
MIN 180 280 140
TYP.
MAX 450 710 710
UNIT mcd mcd mcd mlm/mcd
3 600 605 611 17 60 1.7 2.0 0.01 2.5 10 611
IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA VR = 5 V
d p VF IR
nm nm nm deg V A
Note: Tamb = 25 C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMY33.., YELLOW
PARAMETER Luminous intensity Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current
1)
TEST CONDITION IF = 30 mA
PART VLMY33T1U2 VLMY33R2U2
SYMBOL IV IV V/IV d p VF IR
MIN 280 140
TYP.
MAX 710 710
UNIT mcd mcd mlm/mcd nm nm nm deg
3 583 588 590 18 60 1.7 2.0 0.01 2.5 10 594
IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA VR = 5 V
V A
Note: Tamb = 25 C, unless otherwise specified
Document Number 81336 Rev. 1.0, 04-May-07
www.vishay.com 3
VLM.33..
Vishay Semiconductors
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM) GROUP MIN 1 2 3 4 5 6 611 614 AMBER MAX 618 622 598 600 602 604 606 608 SOFT ORANGE MIN MAX 601 603 605 607 609 611 MIN 581 583 585 587 589 591 YELLOW MAX 584 586 588 590 592 594
Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of 1 nm.
LUMINOUS INTENSITY CLASSIFICATION
GROUP STANDARD P Q R S T U LUMINOUS INTENSITY (MCD) OPTIONAL 1 2 1 2 1 2 1 2 1 2 1 2 MIN 45 56 71 90 112 140 180 224 280 355 450 560 MAX 56 71 90 112 140 180 224 280 355 450 560 710
CROSSING TABLE
VISHAY VLMS33S1T2 VLMS33S1U1 OSRAM LST67B-S1T2 LST67B-T1U1
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. The above type Numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable.
www.vishay.com 4
Document Number 81336 Rev. 1.0, 04-May-07
VLM.33..
Vishay Semiconductors
TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified
100 90
100 90 IF - Forward Current (mA) 80 70 60 50 40 30 20 10
25 50 75 100 125
20144
IF - Forward Current (mA)
80 70 60 50 40 30 20 10 0 10 RthJA = 400 K/W
yellow soft orange amber super red
0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 VF - Forward Voltage (V)
16784
Tamb - Ambient Temperature (C)
Figure 1. Forward Current vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
0.12
1.2
IV rel - Relative Luminous Intensity
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
amber
0.10
IF - Forward Current (A)
0.08 0.06 0.04 0.02 0.00 10 -5
tP/T = 0.005 0.05 0.5
10 -4
10 -3
10 -2
10 -1
10 0
101
10 2
20196
570 580 590 600 610 620 630 640 650 660 670
17044
tP - Pulse Length (s)
- Wavelength (nm)
Figure 2. Forward Current vs. Pulse Length
Figure 5. Relative Intensity vs. Wavelength
0
10
20 30
10
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
super red amber yellow soft orange
1
40 1.0 0.9 0.8 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
0.1
0.7
0.01
95 10319
1
20143
10
100
IF - Forward Current (mA)
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Relative Luminous Intensity vs. Forward Current
Document Number 81336 Rev. 1.0, 04-May-07
www.vishay.com 5
VLM.33..
Vishay Semiconductors
2.5 IV rel -Relative Luminous Intensity amber 2.0 1.5 1.0 0.5 0.0 - 50
20197
- 25
0
25
50
75
100
1.2 1.1 super red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 - Wavelength (nm)
Tamb - Ambient Temperature (C)
Figure 7. Relative Luminous Intensity vs. Amb. Temperature
IV rel - Relative Luminous Intensity
20198
Figure 10. Relative Intensity vs. Wavelength
- Change of Dom. Wavelength (nm)
6 amber 4 2 0 -2 -4 -6 - 50 IV rel - Relative Luminous Intensity
2.5
super red
2.0 1.5 1.0 0.5 0.0 - 50
d
- 25
0
25
50
75
100
20201
20199
Tamb - Ambient Temperature (C)
- 25 0 25 50 75 Tamb - Ambient Temperature (C)
100
Figure 8. Change of Dominant Wavelength vs. Ambient Temperature
Figure 11. Relative Luminous Intensity vs. Amb. Temperature
VF - Change of Forward Voltage (mV)
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 100 Tamb - Ambient Temperature (C)
10 mA 30 mA 50 mA amber
d - Change of Dom. Wavelength (nm)
1.5 super red 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5 10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA)
20200
20202
Figure 9. Change of Forward Voltage vs. Ambient Temperature
Figure 12. Change of Dominant Wavelength vs. Forward Current
www.vishay.com 6
Document Number 81336 Rev. 1.0, 04-May-07
VLM.33..
Vishay Semiconductors
d - Change of Dom. Wavelength (nm)
3 2 1 0 -1 -2 -3 -4 -5 - 50 - 25 0 25 50 75 100
17021
2.5 IV rel - Relative Luminous Intensity
super red
soft orange 2.0 1.5 1.0 0.5 0.0 - 50
20203
Tamb - Ambient Temperature (C)
- 25 0 25 50 75 100 Tamb - Ambient Temperature (C)
Figure 13. Change of Dominant Wavelength vs. Ambient Temperature
Figure 16. Relative Luminous Intensity vs. Amb. Temperature
- Change of Dom. Wavelength (nm)
VF - Change of Forward Voltage (mV)
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 100
10 mA 50 mA 30 mA red
6 soft orange 4 2 0 -2 -4 -6 - 50
d
- 25
0
25
50
75
100
17039
Tamb - Ambient Temperature (C)
17022
Tamb - Ambient Temperature (C)
Figure 14. Change of Forward Voltage vs. Ambient Temperature
Figure 17. Change of Dominant Wavelength vs. Ambient Temperature
1.2 1.1 soft orange 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 560 570 580 590 600 610 620 630 640 650 660
VF - Change of Forward Voltage (mV)
250 50 mA 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (C) 100 10 mA soft orange 30 mA
IV rel - Relative Luminous Itensity
16314
- Wavelength (nm)
17020
Figure 15. Relative Intensity vs. Wavelength
Figure 18. Change of Forward Voltage vs. Ambient Temperature
Document Number 81336 Rev. 1.0, 04-May-07
www.vishay.com 7
VLM.33..
Vishay Semiconductors
1.2 1.1 yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 - Wavelength (nm)
- Change of Dom. Wavelength (nm)
6 yellow 4 2 0 -2 -4 -6 - 50
IV rel - Relative Luminous Intensity
d
16008
17017
- 25 0 25 50 75 Tamb - Ambient Temperature (C)
100
Figure 19. Relative Intensity vs. Wavelength
Figure 21. Change of Dominant Wavelength vs. Ambient Temperature
VF - Change of Forward Voltage (mV)
2.5 IV rel - Relative Luminous Intensity yellow 2.0 1.5 1.0 0.5 0.0 - 50
17016
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (C) 100 10 mA 30 mA 50 mA yellow
- 25
0 25 50 75 Tamb - Ambient Temperature (C)
100
17015
Figure 20. Relative Luminous Intensity vs. Amb. Temperature
Figure 22. Change of Forward Voltage vs. Ambient Temperature
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout 1.2 area covered with solder resist
2.6 (2.8)
4 1.6 (1.9)
20541_1
www.vishay.com 8
4
Document Number 81336 Rev. 1.0, 04-May-07
VLM.33..
Vishay Semiconductors
METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay's LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.)
120 10.0 9.0
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
Adhesive Tape
Identification Label: Vishay Type Group Tape Code Production Code Quantity
Blister Tape
180 178
14.4 max.
94 8665
Figure 24. Reel dimensions - GS08
Component Cavity
94 8670
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED
120 10.4 8.4
TAPING OF VLM.3..
3.5 3.1 2.2 2.0
4.5 3.5 2.5 1.5 4.0 3.6
13.00 12.75 62.5 60.0
5.75 5.25 3.6 3.4
1.85 1.65
Identification Label: Vishay Type Group Tape Code Production Code Quantity
8.3 7.7
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
321 329
14.4 max.
18857
94 8668
Figure 25. Reel dimensions - GS18
Figure 23. Tape dimensions in mm for PLCC-2
Document Number 81336 Rev. 1.0, 04-May-07
www.vishay.com 9
VLM.33..
Vishay Semiconductors
SOLDERING PROFILE BARCODE-PRODUCT-LABEL EXAMPLE:
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300 250 Temperature (C) 200 max. 30 s 150 max. 120 s 100 50 0 0
19885
255 C 240 C 217 C
max. 260 C 245 C
106 A H VISHAY 37
max. 100 s
max. Ramp Up 3 C/s
max. Ramp Down 6 C/s
B
50 100 150 Time (s) 200 250 300
C
D
E
F
G
20195
max. 2 cycles allowed
Figure 26. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C)
TTW Soldering 300 250 Temperature (C) 200 150 100 50 0 0 50 235 C...260 C first wave ca. 200 K/s 100 C...130 C 5s
(acc. to CECC00802)
948626-1
Lead Temperature second wave ca. 2 K/s full line: typical dotted line: process limits
A) Type of component B) Manufacturing Plant C) SEL - Selection Code (Bin): e.g.: R2 = Code for Luminous Intensity Group 3 = Code for Color Group D Date Code year/week E) Day Code (e.g. 1: Monday) F) Batch No. G) Total quantity H) Company Code
2 K/s forced cooling 100 Time (s) 150
ca. 5 K/s
200
250
Figure 27. Double wave soldering of opto devices (all packages)
www.vishay.com 10
Document Number 81336 Rev. 1.0, 04-May-07
VLM.33..
Vishay Semiconductors
DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
LEVEL This bag contains MOISTURE -SENSITIVE DEVICES
CAUTION
2a
1. Shelf life in sealed bag 12 months at <40C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260C) must be: a) Mounted within 672 hours at factory condition of < 30C/60%RH or b) Stored at <10% RH.
Aluminum bag
3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23C + 5C or b) 2a or 2b is not met.
Label
4. If baking is required, devices may be baked for: 192 hours at 40C + 5C/-0C and <5%RH (dry air/nitrogen) or o or 96 hours at 605 Cand <5%RH For all device containers 24 hours at 1005C Not suitable for reels or tubes
Reel
15973
Bag Seal Date: ______________________________ (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
19786
Example of JESD22-A112 Level 2a label ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR-CODE LABELS The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 672 hours under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 C + 5 C/- 0 C and < 5 % RH (dry air/nitrogen) or 96 hours at 60 C + 5 C and < 5 % RH for all device containers or 24 hours at 100 C + 5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 2a label is included on all dry bags.
Document Number 81336 Rev. 1.0, 04-May-07
www.vishay.com 11
VLM.33..
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com 12
Document Number 81336 Rev. 1.0, 04-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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